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| PD - 9.1576 IRG4PH50K INSULATED GATE BIPOLAR TRANSISTOR Features q Short Circuit Rated UltraFast IGBT C High short circuit rating optimized for motor control, tsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations G E VCES = 1200V VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A q q n-channel Benefits q As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI/Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPH50K and IRGPH50M devices q q TO-247 AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 90 90 10 20 190 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) www.irf.com C-1 IRG4PH50K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.91 -- V/C VGE = 0V, IC = 2.0mA -- 2.77 3.5 IC = 24A VGE = 15V Collector-to-Emitter Saturation Voltage -- 3.28 -- IC = 45A see figures 2, 5 V -- 2.54 -- IC = 24A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -10 -- mV/C VCE = VGE, IC = 2.0mA Forward Transconductance 13 19 -- S VCE = 100 V, IC = 24A -- -- 250 VGE = 0V, VCE = 1200V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 5000 VGE = 0V, VCE = 1200V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. -- -- -- -- -- -- -- -- -- -- 10 Typ. 180 25 70 36 27 200 130 1.21 2.25 3.46 -- 35 29 380 280 7.80 13 2800 140 53 Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V see figure 8 110 VGE = 15V -- -- TJ = 25C ns 300 IC = 24A, VCC = 960V 190 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ see figures 9,10,14 4.1 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, -- IC = 24A, VCC = 960V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ see figures 10,11,14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V see figure 7 -- = 1.0MHz td(on) Turn-On Delay Time -- tr Rise Time -- td(off) Turn-Off Delay Time -- tf Fall Time -- Total Switching Loss -- Ets LE Internal Emitter Inductance -- Cies Input Capacitance -- Coes Output Capacitance -- Cres Reverse Transfer Capacitance -- Notes: Repetitive rating; VGE = 20V, pulse width limited bymax. junction temperature. (see figure 13b) VCC = 80% (VCES), VGE = 20V, L = 10H, RG = 5.0, (see figure 13a) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-2 www.irf.com IRG4PH50K 60 F o r b o th : Tria n g u la r w a ve : 50 Duty cycle: 50% TJ = 125 C T sink = 90C G ate drive as specified Po w e r D is s ip a tio n = 4 0 W C la m p vo lta g e : 8 0 % o f ra te d Load Current ( A ) 40 S qu are wave: 30 6 0 % o f ra te d v o lta g e 20 10 Id e al d io de s 0 0.1 1 10 A 100 f, Frequency (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 C 10 TJ = 150 C 10 TJ = 25 C TJ = 25 C 1 1 V GE = 15V 20s PULSE WIDTH 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics C-3 IRG4PH50K 50 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) VGE = 15V 80 us PULSE WIDTH IC = 48 A 40 3.5 30 3.0 IC = 24 A 2.5 20 IC = 12 A 2.0 10 0 25 50 75 100 125 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-4 www.irf.com IRG4PH50K 4000 20 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VCC = 400V I C = 24A 16 C, Capacitance (pF) 3000 Cies 12 2000 8 1000 4 0 1 Coes Cres 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 7.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ IC = 960V = 15V = 25 C = 24A 100 RG = 5.0 Ohm VGE = 15V VCC = 960V IC = 48 A 6.0 10 IC = 24 A IC = 12 A 5.0 1 4.0 3.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance ( ) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature C-5 IRG4PH50K 25 Total Switching Losses (mJ) 15 10 I C , Collector Current (A) RG TJ VCC 20 VGE = 5.0 Ohm = 150 C = 960V = 15V 1000 VGE = 20V T J = 125 oC 100 10 5 0 0 10 20 30 40 50 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA C-6 www.irf.com |
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